Galaxy Century Microelectronics MJD127
Epitaxial Planar PNP Transistor
| Part No. | MJD127 |
|---|---|
| Datasheet | MJD127 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Epitaxial Planar PNP Transistor |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain.● Built-in a Damper Diode at E-C. Pb Lead-free
● Lead Formed for Surface Mount
APPLICATIONS
.● Straight Lead.
● Complement to MJD122. Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -8 A ICP Collector Power Dissipation -16 A IB Base Current -120 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)030 Rev.A 1 Production specification Epitaxial Planar PNP Transistor MJD127
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter sustaining voltage VCEO(sus) IC=-30mA,IB=0 -100 V Collector cut
