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MJD127 - Epitaxial Planar PNP Transistor

Key Features

  • High DC Current Gain.
  • Built-in a Damper Diode at E-C. Pb Lead-free.
  • Lead Formed for Surface Mount.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
MJD122 Epitaxial Planar NPN Transistor
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Epitaxial Planar PNP Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  Complement to MJD122. Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -8 A ICP Collector Power Dissipation -16 A IB Base Current -120 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)030 Rev.A www.gmesemi.