MJD127
MJD127 is Epitaxial Planar PNP Transistor manufactured by Galaxy Microelectronics.
Epitaxial Planar PNP Transistor
Features
- High DC Current Gain.
- Built-in a Damper Diode at E-C.
Pb
Lead-free
- Lead Formed for Surface Mount Applications.
- Straight Lead.
- plement to MJD122.
Production specification
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-8 A
ICP Collector Power Dissipation
-16...
