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MJD127 - PNP Transistor

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127 Complement to MJD122 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value - 100 - 100 -5 -8 - 16 - 120 20 1.