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MJD127 - Silicon PNP Darlington Power Transistor

General Description

Low Collector-Emitter saturation voltage Lead formed for surface mount applications High DC current gain 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed swi

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 PC PC Rth j-a Total Power Dissipation @ Ta=25℃ Collector Power Dissipation TC=25℃ Thermal Resistance,Junction to Ambient 1.75 20 71.