MJD122 - Silicon NPN Darlington Power Transistor

Inchange Semiconductor

General Description

High DC current gain Built-in a damper diode at E-C Monolithic Construction With Built-in Base-Emitter Shunt Resistors Complementary Pairs Simplifies Designs Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ge

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Datasheet Details

Part number	MJD122
Manufacturer	Inchange Semiconductor
File Size	250.35 KB
Description	Silicon NPN Darlington Power Transistor
Datasheet	MJD122 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·Complementary Pairs Simplifies Designs ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.