MJD122 Overview
·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·plementary Pairs Simplifies Designs ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN...



