Part MJD122
Description Silicon NPN Darlington Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 250.35 KB
Inchange Semiconductor

MJD122 Overview

Description

High DC current gain - Built-in a damper diode at E-C - Monolithic Construction With Built-in Base-Emitter Shunt Resistors - Complementary Pairs Simplifies Designs - Minimum Lot-to-Lot variations for robust device performance and reliable operation.