MJD122 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Galaxy Microelectronics |
MJD122 | Epitaxial Planar NPN Transistor |
onsemi |
MJD122 | Complementary Darlington Power Transistor |
STMicroelectronics |
MJD122 | Complementary power Darlington transistors |
Fairchild |
MJD122 | NPN Silicon Darlington Transistor |
Motorola Semiconductor |
MJD122 | SILICON POWER TRANSISTORS |
·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·plementary Pairs Simplifies Designs ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN...
