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MJD122 - Epitaxial Planar NPN Transistor

Key Features

  • High DC Current Gain.
  • Built-in a Damper Diode at E-C. Pb Lead-free.
  • Lead Formed for Surface Mount.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
MJD127 Epitaxial Planar PNP Transistor
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC Tj ,Tstg Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base Current Collector Power Dissipation Junction and Storage temperature range 100 100 5 8 16 120 1.5 -65 to +150 V V V A A mA W ℃ V/(W)029 Rev.A www.gmesemi.