• Part: MJD122
  • Description: Epitaxial Planar NPN Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 220.74 KB
Download MJD122 Datasheet PDF
MJD122 page 2
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Datasheet Summary

Epitaxial Planar NPN Transistor Features - High DC Current Gain. - Built-in a Damper Diode at E-C. Pb Lead-free - Lead Formed for Surface Mount Applications. - Straight Lead. - plement to MJD127. Production specification TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC Tj ,Tstg Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base Current Collector Power Dissipation Junction and Storage temperature range 100 100 5 8 16 120 1.5 -65 to +150 V V V A A mA W ℃ V/(W)029 Rev.A .gmesemi. Production...