MJD122-1 datasheet by STMicroelectronics.
| Part number | MJD122-1 |
|---|---|
| Datasheet | MJD122-1_STMicroelectronics.pdf |
| File Size | 91.57 KB |
| Manufacturer | STMicroelectronics |
| Description | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
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The MJD122 and MJD127 form plementary NPN - PNP pair. They are manufactured using Epi taxial Bas e technology for cost-eff ective performance. = 150 Ω RATINGS Symbol Parameter NPN PNP VCBO VCEO VEBO IC ICM IB P tot Tstg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 ° C...
View all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| MJD122 | Complementary power Darlington transistors |
| MJD127 | Complementary power Darlington transistors |
| MJD127-1 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| MJD127T4 | Complementary power Darlington transistors |
| MJD2955 | Complementary Silicon Power Transistors |
| MJD3055 | Complementary Silicon Power Transistors |
| MJD31B | Complementary Silicon Power Transistors |
| MJD31C | Low voltage NPN power transistor |
| MJD32B | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD340 | COMPLEMENTARY SILICON POWER TRANSISTORS |
