The MJD122 and MJD127 form complementary NPN - PNP pair.
They are manufactured using Epi taxial Bas e technology for cost-eff ective performance.
R1 Typ.
| Part number | MJD122-1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 91.57 KB |
| Description | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| Datasheet |
 MJD122-1 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| MJD122 | Epitaxial Planar NPN Transistor | GME |
| MJD122 | Complementary Darlington Power Transistor | ON Semiconductor |
| MJD122 | NPN Silicon Darlington Transistor | Fairchild |
| MJD122 | SILICON POWER TRANSISTORS | Motorola |
| MJD122 | Silicon NPN Darlington Power Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| MJD122 | Complementary power Darlington transistors |
| MJD127 | Complementary power Darlington transistors |
| MJD127-1 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| MJD127T4 | Complementary power Darlington transistors |
| MJD2955 | Complementary Silicon Power Transistors |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
