MJD122 Datasheet | STMicroelectronics

MJD122 MJD127 plementary power Darlington transistors Features - Low collector-emitter saturation voltage - Integrated antiparallel collector-emitter diode Applications - General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1. Internal schematic diagrams Table 1. Device summary Order codes Marking MJD122T4 MJD127T4 MJD127 NPN: R1= 7 KΩ R2= 70 Ω PNP: R1= 16 KΩ R2= 60 Ω Polarity NPN PNP Package DPAK Packaging Tape and reel April...