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MJD127T4 - Complementary power Darlington transistors

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Key Features

  • Low collector-emitter saturation voltage.
  • Integrated antiparallel collector-emitter diode.

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MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 1 DPAK Figure 1. Internal schematic diagrams Table 1. Device summary Order codes Marking MJD122T4 MJD122 MJD127T4 MJD127 NPN: R1= 7 KΩ R2= 70 Ω PNP: R1= 16 KΩ R2= 60 Ω Polarity NPN PNP Package DPAK Packaging Tape and reel April 2009 Doc ID 3541 Rev 11 1/12 www.st.com 12 Content Content MJD122, MJD127 1 Electrical ratings . . . .