| Part Number | MJD122 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
Epitaxial Planar NPN Transistor
FEATURES
High DC Current Gain. Built-in a Damper Diode at E-C.
Pb
Lead-free
Lead Formed for Surface Mount Applications.
Straight Lead.
Complement to MJD.
* High DC Current Gain. * Built-in a Damper Diode at E-C. Pb Lead-free * Lead Formed for Surface Mount Applications. * Straight Lead. * Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol . |