The MJD122 is a Epitaxial Planar NPN Transistor.
| Package | DPAK |
|---|---|
| Pins | 3 |
| Height | 2.51 mm |
| Length | 6.73 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | MJD122 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
Epitaxial Planar NPN Transistor
FEATURES
High DC Current Gain. Built-in a Damper Diode at E-C.
Pb
Lead-free
Lead Formed for Surface Mount Applications.
Straight Lead.
Complement to MJD.
* High DC Current Gain. * Built-in a Damper Diode at E-C. Pb Lead-free * Lead Formed for Surface Mount Applications. * Straight Lead. * Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol . |
| Part Number | MJD122 Datasheet |
|---|---|
| Description | SMD Darlington Power Transistor |
| Manufacturer | Taitron Components |
| Overview |
MJD122
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
100 100
VEBO IC
Emitter-Base Voltage Collector Current Continuous Collector Current Peak
5 8 16
IB Base Current
120
Power Di.
* Designed for general purpose amplifier and low speed switching applications * RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Sym. |
| Part Number | MJD122 Datasheet |
|---|---|
| Description | Complementary power Darlington transistors |
| Manufacturer | STMicroelectronics |
| Overview |
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very .
* Low collector-emitter saturation voltage * Integrated antiparallel collector-emitter diode Applications * General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors . |
| Part Number | MJD122 Datasheet |
|---|---|
| Description | Silicon NPN Darlington Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·Complementary Pairs Simplifies Designs ·Minimum Lot-to-Lot variations for rob. .com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 ICEO Collector Cut. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| MJD122-1 | STMicroelectronics | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| MJD122 | Micro Commercial Components | Silicon NPN epitaxial planer Transistors |
| MJD122 | Fairchild Semiconductor | NPN Silicon Darlington Transistor |
| MJD122 | onsemi | Complementary Darlington Power Transistor |
| MJD122 | Motorola Semiconductor | SILICON POWER TRANSISTORS |
| MJD122 | JCET | NPN Transistor |
| MJD122 | HAOHAI | Complementary Darlington Power Transistor |