The MJD127 is a Silicon PNP Darlington Power Transistor.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.63 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | MJD127 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera. ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(ON) Base-Emitter volt. |
| Part Number | MJD127 Datasheet |
|---|---|
| Description | Silicon PNP epitaxial planer Transistors |
| Manufacturer | Micro Commercial Components |
| Overview | 0-' Features +LJK'&&XUUHQW*DLQ %XLOWLQD'DPSHU'LRGHDW(& +DORJHQ)UHH*UHHQ'HYLFH 1RWH 0RLVWXUH6HQVLWLYLW/HYHO (SR[0HHWV8/ 9)ODPPDELOLW5DWLQJ /HDG)UHH)LQLV. +LJK'&&XUUHQW*DLQ %XLOWLQD'DPSHU'LRGHDW(& +DORJHQ)UHH*UHHQ'HYLFH 1RWH 0RLVWXUH6HQVLWLYLW/HYHO (SR[0HHWV8/ 9)ODPPDELOLW5DWLQJ /HDG)UHH)LQLVK5R+6&RPSOLDQW 36XIIL['HVLJQDWHV5R+6 &RPSOLDQW6HH2UGHULQJ,QIRUPDWLRQ Maximum Ratings @ 25°C Unless Othe. |
| Part Number | MJD127 Datasheet |
|---|---|
| Description | Epitaxial Planar PNP Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Epitaxial Planar PNP Transistor
FEATURES
High DC Current Gain. Built-in a Damper Diode at E-C.
Pb
Lead-free
Lead Formed for Surface Mount Applications.
Straight Lead.
Complement to MJD.
* High DC Current Gain. * Built-in a Damper Diode at E-C. Pb Lead-free * Lead Formed for Surface Mount Applications. * Straight Lead. * Complement to MJD122. Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol . |
| Part Number | MJD127 Datasheet |
|---|---|
| Description | Complementary Darlington Power Transistor |
| Manufacturer | onsemi |
| Overview |
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applicati.
* Lead Formed for Surface Mount Applications in Plastic Sleeves * Surface Mount Replacements for 2N6040 *2N6045 Series, TIP120 *TIP122 Series, and TIP125 *TIP127 Series * Monolithic Construction With Built *in Base *Emitter Shunt Resistors * High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc * Epoxy M. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 30000 | 2500+ : 0.16911 USD 5000+ : 0.16805 USD 10000+ : 0.16587 USD 20000+ : 0.16502 USD |
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| Avnet | 20252 | 1+ : 1.08 USD 10+ : 0.729 USD 100+ : 0.5 USD 500+ : 0.402 USD |
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| Newark | 20252 | 1+ : 1.05 USD 10+ : 0.727 USD 100+ : 0.498 USD 500+ : 0.4 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| MJD127T4 | STMicroelectronics | Complementary power Darlington transistors |
| MJD127 | STMicroelectronics | Complementary power Darlington transistors |
| MJD127-1 | STMicroelectronics | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| MJD127 | Fairchild Semiconductor | PNP Transistor |
| MJD127 | JCET | PNP Transistor |
| MJD127S | Micro Commercial Components | PNP Transistor |
| MJD127 | Motorola Semiconductor | SILICON POWER TRANSISTORS |