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MJD127 - SILICON POWER TRANSISTORS

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD122/D Complementary Darlington Power Transistors DPAK For Surface Mount Applications • • • • Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122 Series, and TIP125–TIP127 Series • Monolithic Construction With Built–in Base–Emitter Shunt Resistors • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.