Inchange Semiconductor MJD127
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJD127 |
|---|---|
| Datasheet | MJD127 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector-Emitter saturation voltage●Lead formed for surface mount applications
●High DC current gain
●100% tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 PC PC Rth j-a Total Power Dissipation @ Ta=25℃ Collector Power Dissipation TC=25℃ Thermal Resistance,Junction to Ambient 1.75 20 71.4 TJ Junction Temperature 150 A W W ℃/W ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0...