MJD148 Overview
hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD148 TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A;.
