MJD148 Description
MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. High Gain − 50 Min @ IC = 2.0 A Low Saturation Voltage − 0.5 V @ IC = 2.0 A High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @ IC = 250 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: >8000 V Machine Model,.