MJD148 Datasheet and Specifications PDF

The MJD148 is a NPN Silicon Power Transistor.

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Part NumberMJD148 Datasheet
Manufactureronsemi
Overview MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • High Gain − 50 Min @ IC = 2.0 A • Low Saturation . Î ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol VCEO VCB VEB IC IB Value 45 45 Unit Vdc Vdc Vdc Adc Collector
*Emitter Voltage Collector
*Base .
Part NumberMJD148 Datasheet
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device pe. ebsite： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD148 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturati.
Part NumberMJD148 Datasheet
DescriptionNPN SILICON PLASTIC POWER TRANSISTORS
ManufacturerContinental Device India
Overview Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Total Power Dissipation at Tc=25ºC Derate Above 25ºC Total Power Dissipation at Ta=. .