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MJD148 - Silicon NPN Power Transistor

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Part number MJD148
Manufacturer Inchange Semiconductor
File Size 205.53 KB
Description Silicon NPN Power Transistor
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Description

DC Current Gain- : hFE = 85(Min) @ IC= 0.5A Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO E

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