Datasheet Details
| Part number | MJD148 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.53 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD148-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJD148 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.53 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD148-InchangeSemiconductor.pdf |
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·DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature 50 mA 1.75 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD148 isc Website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD148 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD148 | NPN SILICON PLASTIC POWER TRANSISTORS | CDIL |
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MJD148 | NPN Silicon Power Transistor | ON Semiconductor |
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