MJD148 Overview
Description
DC Current Gain- : hFE = 85(Min) @ IC= 0.5A - Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A - DPAK for Surface Mount Applications - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose amplifer and low speed switching applications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature 50 mA 1.75 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c 6.25 ℃/W Rth j-a MJD148 isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD148 TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 1V ICBO Collector Cutoff Current VCB= 45V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 10mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.5A ; VCE= 1V hFE-3 DC Current Gain IC= 2A ; VCE= 1V hFE-4 DC Current Gain IC= 3A ; VCE= 1V fT Current-Gain-Bandwidth Product IC= 0.25 A; VCE= 1V; ftest = 1MHz MIN MAX UNIT 45 V 0.5 V 1.1 V 20 μA 1 mA 40 85 375 50 30 3 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a g.
