DC Current Gain-
: hFE = 85(Min) @ IC= 0.5A
Low Collector Saturation Voltage-
: VCE(sat) = 0.5V(Max.)@ IC= 2A
DPAK for Surface Mount Applications
Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
Designed for use in general purpo
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isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage-
: VCE(sat) = 0.5V(Max.)@ IC= 2A ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
7
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
50
mA
1.
MJD148 Datasheet
