MJD31C datasheet by Inchange Semiconductor.
| Part number | MJD31C |
|---|---|
| Datasheet | MJD31C-InchangeSemiconductor.pdf |
| File Size | 250.13 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·plement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJD31C | NPN Transistor | SeCoS |
 |
MJD31C | NPN Transistor | Diodes |
 |
MJD31C | Complementary Power Transistors | Kexin |
 |
MJD31C | COMPLEMENTARY PLASTIC POWER TRANSISTORS | CDIL |
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MJD31C | SILICON POWER TRANSISTORS | ON |
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| MJD127 | Silicon PNP Darlington Power Transistor |
| MJD128 | Silicon PNP Darlington Power Transistor |
| MJD148 | Silicon NPN Power Transistor |
