SeCoS Halbleitertechnologie GmbH MJD31C
NPN Transistor
| Part No. | MJD31C |
|---|---|
| Datasheet | MJD31C Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Designed for general Excellent DC Current Gain Characteristics D-Pack (TO-252) PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A B GE C D Collector 2 1 Base 3 EmitterABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Range VCBO VCEO VEBO IC PC TJ ,TSTG 100 100 5 3 1.25 150 , -55~150 K HF MJ N O P Millimeter REF. Min. Max. A 6.35 6.8 B 5.20 5.50 C 2.15 2.40 D 0.45 0.58 E 6.8 7.5 F 2.40 3.0 G 5.40 6.25 H 0.64 1.20 Millimeter REF. Min. Max. J 2.30 REF. K 0.64 0.90 M 0.50 1.1 N 0.9 1.65 O0 0.15 P 0.43 0.58 Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage V(BR)CBO 100 - - Collector-emitter breakdown voltage VCEO(SUS) 100 - - Emitter-base breakdown voltage V(BR)EBO 5 - -...