MJD44H11
MJD44H11 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A
- Fast Switching Speeds
- plement to Type MJD45H11
- DPAK for Surface Mount Applications
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@TC=25℃ Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
20 W
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS...
