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MJD44H11 - Complementary power transistors

General Description

These devices are manufactured using low voltage multi epitaxial planar technology.

They are intended for general-purpose linear and switching applications.

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Figure 1.

Key Features

  • Low collector-emitter saturation voltage.
  • Fast switching speed.
  • Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4").

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. Datasheet − production data . TAB2 3 1 DPAK TO-252 Figure 1. Internal schematic diagram C (TAB) C (TAB) (1) B (1) B E (3) E (3) Table 1. Device summary Order codes Marking MJD44H11T4 MJD44H11 MJD45H11T4 MJD45H11 Polarity NPN PNP Package DPAK DPAK Packaging Tape and reel Tape and reel May 2012 This is information on a product in full production.