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MJD44H11 Datasheet

The MJD44H11 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMJD44H11
ManufacturerInchange Semiconductor
Overview ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for rob. e,Junction to Ambient 71.4 ℃/W MJD44H11 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJD44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sust.
Part NumberMJD44H11
Description8A NPN high power bipolar transistor
ManufacturerNexperia
Overview NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High . and benefits
* High thermal power dissipation capability
* High energy efficiency due to less heat generation
* Electrically similar to popular MJD44H series
* Low collector emitter saturation voltage
* Fast switching speeds 3. Applications
* Power management
* Load switch
* Linear mode voltage reg.
Part NumberMJD44H11
DescriptionComplementary Power Transistors
ManufacturerKexin Semiconductor
Overview SMD Type Transistors Complementary Power Transistors MJD44H11 Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-. Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packages are Available +09.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +01.50 .15 -0.15 +0.50 0.15 -0.15 +1.50 0.28 -0.1 0.80+0.1 .
Part NumberMJD44H11
DescriptionSILICON POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D Complementary Power Transistors • • • • • • • MJD44H11 * PNP MJD45H11 * *Motorola Preferred Device NPN DPAK For Surface Mo. Transistor Device Data 0.118 3.0 0.07 1.8 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ.

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