MJD50
MJD50 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- DC Current Gain -h FE = 30~150@ IC= 0.3A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
- DPAK for Surface Mount Applications
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
15...
