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MJH11018 - Silicon NPN Power Transistor

General Description

High DC Current Gain- : hFE = 400(Min)@ IC= 10A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A Complement to Type MJH11017 Minimum Lot-to-Lot variations for robust d

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isc Silicon NPN Darlington Power Transistor MJH11018 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A ·Complement to Type MJH11017 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 150 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 30 IB Base Current- Continuous 0.