MJH11020
MJH11020 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
: h FE = 400(Min)@ IC= 10A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A
- plement to Type MJH11019
APPLICATIONS
- Designed for general purpose amplifiers ,low frequency switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
IB Base Current- Continuous
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
0.5 150 150
Tstg Storage Temperature Range
-65~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W isc...
