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MJH11020 - Complementary Darlington Silicon Power Transistors

Key Features

  • High DC Current Gain @ 10 Adc.
  • hFE = 400 Min (All Types).
  • Collector.
  • Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min).
  • MJH11018, 17 = 200 Vdc (Min).
  • MJH11020, 19 = 250 Vdc (Min).
  • MJH11022, 21.
  • Low Collector.
  • Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A.
  • Monolithic Construction.
  • These are Pb.
  • Free Devices.

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Datasheet Details

Part number MJH11020
Manufacturer ON
File Size 94.94 KB
Description Complementary Darlington Silicon Power Transistors
Datasheet download datasheet MJH11020 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 = 200 Vdc (Min) — MJH11020, 19 = 250 Vdc (Min) — MJH11022, 21 • Low Collector−Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.