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MJH11022 - Complementary Darlington Silicon Power Transistors

Key Features

  • High DC Current Gain @ 10 Adc.
  • hFE = 400 Min (All Types).
  • Collector.
  • Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min).
  • MJH11018, 17 = 200 Vdc (Min).
  • MJH11020, 19 = 250 Vdc (Min).
  • MJH11022, 21.
  • Low Collector.
  • Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A.
  • Monolithic Construction.
  • These are Pb.
  • Free Devices.

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Datasheet Details

Part number MJH11022
Manufacturer ON
File Size 86.06 KB
Description Complementary Darlington Silicon Power Transistors
Datasheet download datasheet MJH11022 Datasheet

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Other Datasheets by ON

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 = 200 Vdc (Min) — MJH11020, 19 = 250 Vdc (Min) — MJH11022, 21 • Low Collector−Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.