MJH11022 Datasheet and Specifications PDF

The MJH11022 is a Complementary Darlington Silicon Power Transistors.

Datasheet4U Logo
Part NumberMJH11022 Datasheet
Manufactureronsemi
Overview MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequenc.
* High DC Current Gain @ 10 Adc
* hFE = 400 Min (All Types)
* Collector
*Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min)
* MJH11018, 17 = 200 Vdc (Min)
* MJH11020, 19 = 250 Vdc (Min)
* MJH11022, 21
* Low Collector
*Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC .
Part NumberMJH11022 Datasheet
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 250V (Min.) ·High DC Current Gain : hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage : VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Complement to Type MJ. website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Sa.
Part NumberMJH11022 Datasheet
Description15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017/D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifie. ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.