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MJH11020 - Silicon NPN Power Transistor

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Part number MJH11020
Manufacturer Inchange Semiconductor
File Size 151.64 KB
Description Silicon NPN Power Transistor
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Description

High DC Current Gain- : hFE = 400(Min)@ IC= 10A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A Complement to Type MJH11019 APPLICATIONS Designed for general purpose amplifiers ,low frequency switching and motor control applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 200 VCEO Collector-Emitter Voltage 20

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