Datasheet Details
| Part number | MJH11022 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 269.48 KB |
| Description | Silicon NPN Power Transistor |
| Download | MJH11022 Download (PDF) |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | MJH11022 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 269.48 KB |
| Description | Silicon NPN Power Transistor |
| Download | MJH11022 Download (PDF) |
|
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·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 250V (Min.) ·High DC Current Gain : hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage : VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Complement to Type MJH11021 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers, low frequency switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 250 VCEO Collector-Emitter Voltage 250 VEBO Emitter-Base Voltage 5 IC Collector Current-Continunous 15 ICM Collector Current-Peak 30 IB Base Current-Continunous 0.5 PC Collector Power Dissipation @TC=25℃ 150 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.833 ℃/W MJH11022 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJH11022 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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MJH11022 | Complementary Darlington Silicon Power Transistors | ON |
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