Datasheet4U Logo Datasheet4U.com

MJL21194G - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of MJL21194G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MJL21194G
Manufacturer
Inchange Semiconductor
File Size
216.51 KB
Datasheet
MJL21194G-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

MJL21194G Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain. hFE = 25 Min @ IC = 8 Adc. Complement to Type MJL21193. Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Related Datasheet

  • MJL21194 - 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • MJL21193 - 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • MJL21195 - Silicon Power Transistors (ON)
  • MJL21196 - Silicon Power Transistors (ON)
  • MJL0281A - Complementary NPN-PNP Power Bipolar Transistors (ON Semiconductor)
  • MJL0302A - Complementary NPN-PNP Power Bipolar Transistors (ON Semiconductor)
  • MJL1302 - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • MJL1302A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

📌 All Tags

Inchange Semiconductor MJL21194G-like datasheet

MJL21194G Stock/Price