Datasheet Details
| Part number | MJL21194G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.51 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJL21194G-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G.
| Part number | MJL21194G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.51 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJL21194G-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Range isc website：www.iscsemi.com -55~150 ℃ 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8.0A;
IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJL21194 | 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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MJL21194 | COMPLEMENTARY SILICON POWER TRANSISTORS | ON |
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MJL21194 | SILICON POWER TRANSISTOR | SavantIC |
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MJL21194 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| MJL1302A | Silicon PNP Power Transistor |