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MJL21194G - Silicon NPN Power Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high powe

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Datasheet Details

Part number MJL21194G
Manufacturer Inchange Semiconductor
File Size 216.51 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Range isc websit
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