MJL21194G transistor equivalent, silicon npn power transistor.
Perforated Emitter technology
high power audio output, disk head positioners linear applications
ABSOLUTE MAXIMUM RATIN.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) High DC Current Gain
– hFE = 25 Min @ IC = 8 Adc
*Complement to Type MJL21193
*Minimum Lot-to-Lot variations for robust device performance and reliable opera.
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