MJL21194G - Silicon NPN Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	MJL21194G
Manufacturer	Inchange Semiconductor
File Size	216.51 KB
Description	Silicon NPN Power Transistor
Datasheet	MJL21194G Datasheet
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Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250

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Published: Nov 11, 2016 |