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MJL21194 - COMPLEMENTARY SILICON POWER TRANSISTORS

Key Features

  • Total Harmonic Distortion Characterized.
  • High DC Current Gain.
  • Excellent Gain Linearity.
  • High SOA.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number MJL21194
Manufacturer ON
File Size 115.38 KB
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet download datasheet MJL21194 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCBO VEBO VCEX IC ICM IB PD 250 400 5 400 16 30 5 200 1.