MJL21195 - Silicon Power Transistors

Key Features

Total Harmonic Distortion Characterized.
High DC Current Gain.
Excellent Gain Linearity.
High SOA.
Epoxy Meets UL 94, V.
0 @ 0.125 in.
These Devices are Pb.
Free and are RoHS Compliant.

MJL21195 silicon power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJL21195
Manufacturer	ON
File Size	190.44 KB
Description	Silicon Power Transistors
Datasheet	MJL21195 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MJL21195	(MJL21195 / MJL21196) SILICON POWER TRANSISTORS	Motorola
MJL21193	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	Motorola
MJL21193	SILICON POWER TRANSISTOR	SavantIC
MJL21193	PNP Transistor	INCHANGE
MJL21194	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	Motorola

Other Datasheets by ON

Part Number	Description
MJL21193	COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21194	COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21196	Silicon Power Transistors
MJL1302	COMPLEMENTARY SILICON POWER TRANSISTORS
MJL16218	POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • Epoxy Meets UL 94, V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 400 5 400 16 30 5 200 1.