MMBR920L transistor equivalent, silicon npn rf transistor.
*Designed for thick and thin-film circuits using surface mount
components and requiring low-noise , high-gain signal.
*Low Noise
NF= 2.4dB TYP. @ f= 500MHz
*High Gain
Gpe= 15dB TYP. @ f= 500MHz
APPLICATIONS
*Designed for thick and thin-film circuits using surface mount
components and requiring low-noise , high-gain signal amplification at frequencies to .
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