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NVD5117PL

Manufacturer: Inchange Semiconductor

NVD5117PL datasheet by Inchange Semiconductor.

NVD5117PL datasheet preview

NVD5117PL Datasheet Details

Part number NVD5117PL
Datasheet NVD5117PL-InchangeSemiconductor.pdf
File Size 286.81 KB
Manufacturer Inchange Semiconductor
Description P-Channel MOSFET Transistor
NVD5117PL page 2

NVD5117PL Overview

·motor drive, DC-DC converter, power switch and solenoid drive. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -61 A PD Total Dissipation @TC=25℃ 118 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c , Junction to Case MAX 1.3 UNIT ℃/W...

NVD5117PL Key Features

  • Drain Current : ID= -61A@ TC=25℃ -Drain Source Voltage

NVD5117PL from other manufacturers

View NVD5117PL datasheet index

Brand Logo Part Number Description Other Manufacturers
ON Semiconductor Logo NVD5117PL Power MOSFET ON Semiconductor
Inchange Semiconductor logo - Manufacturer

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