NVD5117PL - P-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	NVD5117PL
Manufacturer	Inchange Semiconductor
File Size	286.81 KB
Description	P-Channel MOSFET Transistor
Datasheet	NVD5117PL-InchangeSemiconductor.pdf

NVD5117PL Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -61 A PD Total Dissipation @TC=25℃ 118 W TJ Max.Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.3 UNIT ℃/W isc web

Features

Drain Current : ID= -61A@ TC=25℃.
Drain Source Voltage : VDSS= -60V(Min).
Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 30, 2022 |