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NVD5117PL - P-Channel MOSFET Transistor

Description

and solenoid drive.

Features

  • Drain Current : ID= -61A@ TC=25℃.
  • Drain Source Voltage : VDSS= -60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc P-Channel MOSFET Transistor NVD5117PL FEATURES ·Drain Current : ID= -61A@ TC=25℃ ·Drain Source Voltage : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -61 A PD Total Dissipation @TC=25℃ 118 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.
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