Datasheet Details
| Part number | PHP18NQ11T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.07 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | PHP18NQ11T-InchangeSemiconductor.pdf |
|
|
Overview: isc N-Channel MOSFET Transistor ·.
| Part number | PHP18NQ11T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.07 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | PHP18NQ11T-InchangeSemiconductor.pdf |
|
|
|
·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 110V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 110 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A ID(puls) Pulse Drain Current 72 A Ptot Total Dissipation@TC=25℃ 79 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.9 ℃/W PHP18NQ11T isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=250µA VGS(th) Gate Threshold Voltage VDS= VGS;
Compare PHP18NQ11T distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
PHP18NQ11T | N-channel MOSFET | nexperia |
 |
PHP18NQ11T | N-Channel FET | NXP Semiconductors |
| Part Number | Description |
|---|---|
| PHP28NQ15T | N-Channel MOSFET Transistor |