PHP18NQ11T Datasheet | NXP Semiconductors

TrenchMOS™ standard level FET Rev. 01 - 13 November 2003 M3D307 Product data 1. Product profile 1.1 Description .. N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Fast switching s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Inverters s Switched-mode power supplies s Class-D audio amplifiers. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 79 W s ID ≤ 18 A s RDSon ≤ 90 mΩ 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 (TO-220AB), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) mounting base;...