PHP18NQ11T Datasheet PDF

The PHP18NQ11T is a N-Channel FET.

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Part NumberPHP18NQ11T Datasheet
ManufacturerNXP Semiconductors
Overview N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Fast switching s Low thermal resistance. 1.3 Application. s Fast switching s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Inverters s Switched-mode power supplies s Class-D audio amplifiers. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 79 W s ID ≤ 18 A s RDSon ≤ 90 mΩ 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 (TO.
Part NumberPHP18NQ11T Datasheet
DescriptionN-channel MOSFET
ManufacturerNexperia
Overview Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co. and benefits
* Higher operating power due to low thermal resistance
* Suitable for high frequency applications due to fast switching characteristics 1.3 Applications
* Class-D audio amplifiers
* DC-to-DC convertors
* Inverters
* Switched-mode power supplies 1.4 Quick reference data Table 1. Qui.
Part NumberPHP18NQ11T Datasheet
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 110V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 50µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=18A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=9A IGSS Gate-Body Leakage Current VGS= ±10V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 110V; VGS= 0 PHP18NQ11T MIN TYPE MAX UNIT 11.