PHP18NQ11T - N-Channel MOSFET Transistor

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Description

Drain Current ID= 18A@ TC=25℃ Drain Source Voltage- : VDSS= 110V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM

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Part number	PHP18NQ11T
Manufacturer	Inchange Semiconductor
File Size	260.07 KB
Description	N-Channel MOSFET Transistor
Datasheet	PHP18NQ11T Datasheet
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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 110V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 110 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A ID(puls) Pulse Drain Current 72 A Ptot Total Dissipation@TC=25℃ 79 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.9 ℃/W PHP18NQ11T isc website：www.

Published: Jul 10, 2022 |