2SA1216 - Silicon PNP Power Transistor

Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) Good Linearity of hFE Complement to Type 2SC2922 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

Inchange Semiconductor Company Limited

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Datasheet Details

Part number	2SA1216
Manufacturer	Inchange Semiconductor Company Limited
File Size	200.08 KB
Description	Silicon PNP Power Transistor
Datasheet	2SA1216 Datasheet
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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Mar 19, 2009 |