| Part Number | 2SA1216 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A. Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A ICBO Collector Cutoff Current VCB= -180V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -8A; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz fT Current-. |
2SA1216 Datasheet and Specifications PDF
The 2SA1216 is a Silicon PNP Power Transistor.
| Part Number | 2SA1216 Datasheet |
|---|---|
| Description | Silicon PNP Epitaxial Planar Transistor |
| Manufacturer | Sanken |
| Overview |
LAPT
2SA1216
Application : Audio and General Purpose
(Ta=25°C) 2SA1216 –100max –100max –180min 30min∗ –2.0max 40typ 500typ V MHz pF
20.0min 4.0max
Silicon PNP Epitaxial Planar Transistor (Complement.
I C * V CE Characteristics (Typical) *1. m 00 A V CE ( sa t ) * I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) *3 I C * V BE Temperature Characteristics (Typical) *17 *15 Collector Current I C (A) (V C E = *4V) 5A *1 A 00 m A *17 *15 *5 *7 0 *40 mA *3 0. |