2SA1216 Overview
Description
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) - Good Linearity of hFE - Complement to Type 2SC2922 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SA1216 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 200.08 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SA1216 | Sanken | Silicon PNP Epitaxial Planar Transistor |
| A1216 | Sanken | 2SA1216 |
| A1213 | Toshiba | 2SA1213 |
| 2SA1213 | Toshiba | Silicon PNP Transistor |
| 2SA1215 | Sanken | Silicon PNP Transistor |