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LAPT
2SA1215
Application : Audio and General Purpose
(Ta=25°C) 2SA1215 –100max –100max –160min 50min∗ –2.0max 50typ 400typ V MHz pF
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1215 –160 –160 –5 –15 –4 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.
2SA1215 Datasheet
