Datasheet Details
| Part number | 2SA1216 |
|---|---|
| Manufacturer | Inchange Semiconductor Company Limited |
| File Size | 200.08 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1216_InchangeSemiconductorCompanyLimited.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216.
| Part number | 2SA1216 |
|---|---|
| Manufacturer | Inchange Semiconductor Company Limited |
| File Size | 200.08 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1216_InchangeSemiconductorCompanyLimited.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;
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2SA1216 | Silicon PNP Epitaxial Planar Transistor | Sanken electric |
| Part Number | Description |
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