JCET 2SA1213
PNP Transistor
FEATURES
z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and SwitchingAPPLICATIONS
z Low Saturation Voltage z High Speed Switching Time SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTERMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -50 -50 -5 -2 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-0