2SA1213 Datasheet | Galaxy Microelectronics

FEATURES z Low saturation voltage z High speed switching time Pb Lead-free z Small flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z plementary to 2SC2873 Production specification ORDERING INFORMATION Type No. Marking NO/NY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2- 0.8t) -50 -50 -5 -2 -0.4 500 1000(Note1) -55 to +150 Units V V V A A m W ℃ E040 Rev.A .gmicroelec. 1 Production specification Silicon Planar Epitaxial Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO...