Datasheet4U Logo Datasheet4U.com

2SA1213 - Silicon Planar Epitaxial Transistor

Key Features

  • z Low saturation voltage z High speed switching time Pb Lead-free z Small flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2873 Production specification 2SA1213.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1213 Silicon PNP Transistor Toshiba Semiconductor
2SA1213 Transistors Kexin
2SA1213 PNP Transistor JCET
2SA1213 PNP Transistor Diodes
2SA1213 Plastic-Encapsulate Transistors WILLAS

Other Datasheets by Galaxy Microelectronics

Part Number Description
2SA1201 Plastic-Encapsulate Transistors
2SA1203 PNP Transistor
2SA1204 Silicon Planar Epitaxial Transistor
2SA1235A Silicon Epitaxial Planar Transistor
2SA1012 PNP Epitaxial Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Planar Epitaxial Transistor FEATURES z Low saturation voltage z High speed switching time Pb Lead-free z Small flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2873 Production specification 2SA1213 ORDERING INFORMATION Type No. Marking 2SA1213 NO/NY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) -50 -50 -5 -2 -0.4 500 1000(Note1) -55 to +150 Units V V V A A mW ℃ E040 Rev.A www.gmicroelec.