Toshiba 2SA1213
Silicon PNP Transistor
| Part No. | 2SA1213 |
|---|---|
| Datasheet | 2SA1213 Download |
| Manufacturer |  Toshiba |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
APPLICATIONS
Power SwitchingAPPLICATIONS
2SA1213 Unit: mm● Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
● High speed switching time: tstg = 1.0 μs (typ.)
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SC2873
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg −50 −50 −5 −2 −0.4 500 1000 150 −55 to 150 V V V A A mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
