2SA1213 Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High speed switching time:.
| Part number | 2SA1213 |
|---|---|
| Datasheet | 2SA1213_ToshibaSemiconductor.pdf |
| File Size | 189.50 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Transistor |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High speed switching time:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1213 | Silicon Planar Epitaxial Transistor | GME |
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2SA1213 | Transistors | Kexin |
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2SA1213 | PNP Transistor | JCET |
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2SA1213 | PNP Transistor | Diodes |
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2SA1213 | Plastic-Encapsulate Transistors | WILLAS |
| Part Number | Description |
|---|---|
| 2SA1200 | SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
| 2SA1201 | Silicon PNP Transistor |
| 2SA1202 | Silicon PNP Transistor |
| 2SA1203 | Silicon PNP Transistor |
| 2SA1225 | Silicon PNP Transistor |
| 2SA1241 | Silicon PNP Transistor |
| 2SA1242 | Silicon PNP Transistor |
| 2SA1244 | PNP Transistor |
| 2SA1245 | Silicon PNP Epitaxial Planar Transistor |
| 2SA1255 | SILICON PNP TRIPLE DIFFUSED TRANSISTOR |