2SA1213
2SA1213 is Silicon PNP Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low saturation voltage: VCE (sat) =
- 0.5 V (max) (IC =
- 1 A)
- High speed switching time: tstg = 1.0 μs (typ.)
- Small flat package
- PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
- plementary to 2SC2873
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
- 50
- 50
- 5
- 2
- 0.4 500
- 55 to 150
V V V A A m W
°C °C
PW-MINI JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note...
