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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1213
Power Amplifier Applications Power Switching Applications
2SA1213
Unit: mm
• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
−50 −50 −5 −2 −0.4 500
1000
150 −55 to 150
V V V A A
mW
°C °C
PW-MINI JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.
2SA1213 Datasheet
