Datasheet Details
| Part number | 2SA1215 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.81 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1215_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1215.
| Part number | 2SA1215 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.81 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1215_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·High Power Dissipation ·plement to Type 2SC2921 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1215 | Silicon PNP Transistor | Sanken electric |
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|---|---|
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