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2SA1214 - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Desinged for low frequency power amplifier applications.

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isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.