Datasheet Details
| Part number | 2SA1214 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.97 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1214-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1214.
| Part number | 2SA1214 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.97 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1214-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1214 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
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