2SA1214 Description
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1214 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP....