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2SA1217 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA1217.

General Description

·Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·plement to Type 2SC2877 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications.

·Suitable for output stage of 5 watts car radio and car stereo.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

2SA1217 Distributor